材料科学
原位
异质结
激光器
光电子学
半导体激光器理论
砷化镓
半导体
光学
化学
物理
有机化学
作者
Hitoshi Sato,Taku Tsuchiya,T. Kitatani,A. Taike,Hiroyuki Uchiyama,K. Shinoda,N. Takahashi,M. Aoki
出处
期刊:Electronics Letters
[Institution of Engineering and Technology]
日期:2004-01-01
卷期号:40 (11): 669-669
被引量:9
摘要
An in-situ-cleaned and regrown 1.3 µm InGaAlAs buried-heterostructure laser was fabricated for the first time. The degradation of its driving current was about 1% after a 3000 h aging test. It can thus be concluded from this result that in-situ cleaning is a promising means of fabricating highly reliable, high-performance InGaAlAs BH lasers.
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