Study of Low-Temperature Wafer Bonding With Au-Au Bonding Technique

In general, metal diffusion bonding is carried out at a temperature in the range of 300 ∼ 400 °C and is well documented [1]. However, the knowledge of metal bonding at low temperatures below 300 °C is inadequate yet. On the other hand, low temperature metal bonding is of importance in realizing advanced integrated devices such as MEMS-Semiconductors and high-brightness LED. This paper reports the results of a feasibility study of low-temperature metal bonding with the use of Au-Au diffusion bonding technique.