Power electronics innovation by Silicon Carbide power semiconductor devices
作者
Hajime Okumura
标识
DOI:10.1109/imfedk.2014.6867086
摘要
The importance of power electronics innovation in the future human society and related technology roadmap is presented. Based on the roadmap, recent progress in widegap semiconductor power electronics is reviewed, especially focused on Silicon Carbide (SiC) technology [1-3].