兴奋剂
材料科学
磁电阻
氮化物
图层(电子)
凝聚态物理
芯(光纤)
纳米-
不对称
纳米技术
复合材料
光电子学
磁场
物理
量子力学
作者
Zuo-Fei Zhao,Hui Wang,Shilin Xiao,Dingbin Huang,Yu Gu,Y. X. Xia,Qing Jin,C. L. Zha,Xiaoshan Wu
摘要
The influence of a nano-nitride-layer (NNL) doped at different interfaces in the structure of Cu∕Co∕Cu∕Co∕Cu on magnetoresistance (MR) is investigated. As the NNL is doped at the inner interfaces of the core Co∕Cu∕Co sandwich, an inverse MR is observed. This contrasts sharply with that doping at the two outer interfaces between the core sandwich (Co∕Cu∕Co) and the buffer or/and the capping layers. The result arises from the negative spin asymmetry induced by the NNL doping under different interfacial circumstances. Moreover, the MR value increases in magnitude as temperature is decreased from room temperature to 4.2K.
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