High-performance optoelectronic devices based on p-type selenium-alloyed tellurium oxide semiconductors

P-type oxide semiconductors are vital for advancing complementary metal–oxide–semiconductor (CMOS) technology, yet their development lags behind n-type counterparts due to low hole mobilities and stability issues. This study focuses on p-type selenium-alloyed tellurium suboxide (Se-alloyed Te–TeOx) thin films, achieving a mobility of 15.6 cm2 V−1 s−1 in field-effect transistors with optimized 40 nm thickness. Comprehensive characterization confirms the films' amorphous structure and uniform elemental distribution. Temperature-dependent measurements (83–393 K) reveal nearly temperature-independent mobility from 83 to 293 K due to effective trap suppression by Se alloying, followed by a steep phonon-limited decline above room temperature. The films enable high-performance photodetectors and optical communication systems, with a responsivity of 31.2 mA W−1 at 405 nm and a communication rate of 0.48 Mbit/s at 542 nm. These advancements highlight Se-alloyed Te–TeOx as a promising material for next-generation optoelectronic devices, including CMOS-compatible circuits and high-speed photodetectors.