Study on Reactive Ion Etching Technology of Au Thin Film

Dry etching of Au was studied by reactive ion etching(RIE) technology and the etching rate was presented to be variable with etching parameters,such as the bias between anode and cathode,etching pressure and component of gas.It is indicated that the etching rate increases with the bias and lower pressure,while decreasing at higher pressure.The component of gas has great effect on the etching rate.Etching thickness changes proportionally with etching time.Also,the uniformity and the selection ratio can be controlled by adjusting the parameters.