Compact logic NAND-gate based on a single in-plane quantum-wire transistor
作者
Stephan Reitzenstein,L. Worschech,Christian Müller,A. Forchel
出处
期刊:IEEE Electron Device Letters [Institute of Electrical and Electronics Engineers] 日期:2005-02-28卷期号:26 (3): 142-144被引量:12
标识
DOI:10.1109/led.2004.842651
摘要
We propose and demonstrate the operation of a monolithic logic NAND-gate based on a single in-plane quantum-wire transistor (QWT). The QWT is controlled by two lateral gates which serve as input terminals with a nonlinear transfer characteristic. Logic operation is demonstrated by exploiting a gate voltage-dependent efficiency of the lateral gates. The compact logic NAND-gate features high input impedance, shows voltage gain, and operates at room temperature.