Multi-wavelength edge detection based on nonlocal multilayer GaAs–AlAs thin films

We demonstrate a compact multilayer GaAs-AlAs structure for passive optical edge detection at multiple wavelengths. Through the inverse design of the layer thicknesses, this structure manipulates spatial frequency components of an incoming wavefront, selectively reflecting high-frequency features while suppressing low-frequency intensity variations. Simulations reveal a reflectance transition from minimal to near-total as a function of numerical aperture, a property leveraged for enhancing edge contrast in optical imaging. For the first time, to our knowledge, we utilize molecular beam epitaxy (MBE) to fabricate edge detection devices, ensuring structural fidelity. Material characterization confirms high-quality interfaces, precise thickness control, and excellent uniformity, validating the suitability of MBE for this application. Experimental angle-resolved reflectance measurements closely align with theoretical predictions, demonstrating the feasibility of this approach for real-time, hardware-based optical image processing. The proposed design automatically works for at least two wavelengths and can be readily extended to operate at multiple wavelengths simultaneously. This work opens new possibilities for employing multilayer interference structures in high-performance optical imaging and real-time signal processing.