芯片组
放大器
发射机
比克莫斯
晶体管
收发机
电气工程
分路器
太赫兹辐射
线性
物理
材料科学
拓扑(电路)
光电子学
CMOS芯片
工程类
光学
频道(广播)
炸薯条
电压
作者
Zekun Li,Jixin Chen,Huanbo Li,Jiayang Yu,Yuxiang Lu,Rui Zhou,Zhe Chen,Wei Hong
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2023-01-24
卷期号:58 (7): 1913-1927
被引量:22
标识
DOI:10.1109/jssc.2023.3236621
摘要
This article presents a fully integrated 220 GHz sliding-intermediate frequency (sliding-IF) quadrature transmitter (Tx) and receiver (Rx) chipset supporting high-order modulation schemes in a 0.13- $\mu \text{m}$ SiGe bipolar junction transistor and the complementary metal-oxide-semiconductor transistor (BiCMOS) technology with $f_{T}/f_{\mathrm {max}} =300/500$ GHz. For supporting the sliding-IF scheme, a 55-GHz frequency tripler, a low-loss miniature power splitter, and a 165-GHz high-efficiency frequency tripler are employed for the local oscillator (LO) generator of the transceiver (TRx). By using the sliding-IF architecture, the power consumption of the LO generator in the sub-terahertz (sub-THz) band is effectively reduced. The proposed miniature power splitter occupies a small area, which is flexible for Tx and Rx layout arrangements. In the Tx part, a 220-GHz high-gain, high-linearity power amplifier (PA) is employed to enhance the conversion gain (CG) and output power of the Tx. Two up-conversion mixers are introduced for double conversion in sliding-IF architecture. The Tx exhibits 42-GHz RF bandwidth, 38-dB CG, and 8.5-dBm saturated output power ( $P_{\mathrm {sat}}$ ). On the Rx side, a 220-GHz low noise amplifier (LNA) with a noise-reduction technique is employed to reduce the noise figure (NF) of the Rx. A double-conversion Gilbert-like topology is proposed for the down-conversion mixer which saves power consumption and reduces the NF. A baseband amplifier (BBA) follows the down-conversion mixer to improve the dynamic range. The Rx exhibits 31-GHz RF bandwidth, 48-dB CG with 25-dB gain control, and 11-dB single sideband (SSB) NF. Furthermore, on-chip slot antennas are adopted in the Tx and Rx to reduce the losses introduced by the interconnection between off-chip antennas and RF front-end devices. The antenna combined with a 20-mm radius silicon lens provides high directivity. Wireless transmission experiments demonstrate 11.2/2.4 Gbps data rates with 16-QAM/64-QAM modulation scheme over 0.2 m. The Tx and Rx consume around 640 and 495 mW, respectively.
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