AI/Lu/Lu2O3/ Al Memristor for Synaptic and Memory Applications

In this paper, we propose the designing of bipolar resistive switching Memristor using high-k dielectric material ‘Lu203’ as switching layer using combined software package of COMSOL multi-physics package tool based on Finite element method (FEM). The simulation results of Lu2O3 memristor reports a stable hysteresis I-V characteristics and observed lower C2C variability of 13.61 % and 14.54% for SET and RESET states respectively which noted lower values than earlier high-k dielectric Y2O3 memristor and also observed ‘Potentiations’ and ‘Depressions’ of synaptic weights with different Voltage ramp-rates for synaptic applications and CQ behavior phenomenon enhances the device for multi-level storage and high-density memory applications.