2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory

Abstract 2D materials have shown great potential in the application of resistive random access memory (RRAM) for information storage. Much attention has been attracted from 2D semiconducting bismuth oxyselenide (Bi 2 O 2 Se) for excellent properties in multi‐performance nanoelectronics. By using a chemical vapor deposition (CVD) method, Bi 2 O 2 Se nanosheets with high quality are grown. Combining with the oxygen plasma method, 2D heterostructure of Bi 2 O 2 Se/Bi 2 SeO x nanosheet is realized; and the heterostructure exhibits obvious resistive switching behavior. The resistive switching mechanism is analyzed in detail, and the conductive mechanism of the fabricated device is also discussed. The resistive switching of Bi 2 O 2 Se nanosheets is endowed through the method of O 2 plasma treatment, which makes it feasible for developing its application in the RRAM.