Investigation on the Optoelectronic Performance and Modulation Bandwidth of Green µ-LEDs Using AlON Buffer Layer

This study investigates an AlON buffer layer approach to enhance the optoelectronic performance and modulation bandwidth of green µ-LEDs. Compared to traditional AlN buffer layers, the AlON buffer layer improves GaN crystal quality, reduces internal stress, and suppresses the quantum-confined Stark effect. The modulation bandwidth shows a 21.75% enhancement over devices with AlN buffer layers. The peak external quantum efficiency is also improved by 9.86% compared to traditional structures. These results highlight the potential of AlON buffer layers for high-performance green µ-LEDs in both display and visible light communication applications.