材料科学
钝化
激光器
非晶硅
硅
碳化物
氮化物
氮化硅
光电子学
碳化硅
接触电阻
铝
无定形固体
氧化物
太阳能电池
制作
冶金
晶体硅
光学
纳米技术
图层(电子)
化学
结晶学
替代医学
病理
物理
医学
作者
Pablo Ortega,A. Orpella,Isidro Martín,M. Colina,Gema López,C. Voz,María Isabel Gómez Sánchez,C. Molpeceres,R. Alcubilla
摘要
ABSTRACT In this work we study the optimization of laser‐fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c‐Si and mc‐Si solar cell fabrication: thermally grown silicon oxide (SiO 2 ), deposited phosphorus‐doped amorphous silicon carbide (a‐SiC x /H( n )), aluminum oxide (Al 2 O 3 ) and silicon nitride (SiN x /H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65–3 mΩ cm 2 have been obtained. Copyright © 2011 John Wiley & Sons, Ltd.
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