材料科学
原子层沉积
兴奋剂
电介质
分析化学(期刊)
结晶
钛酸钡
铝
薄膜
铁电性
化学工程
纳米技术
光电子学
复合材料
化学
工程类
色谱法
作者
Yongmin Kim,Peter Schindler,Anup L. Dadlani,Shinjita Acharya,J. Provine,Jihwan An,Fritz B. Prinz
标识
DOI:10.1016/j.actamat.2016.07.018
摘要
Plasma-enhanced atomic layer deposition (PEALD) of ultrathin (∼7 nm) slightly Ti-rich BaxTiyOz (BTO) films with different Al-doping concentration ([Al]/([Al] + [Ba] + [Ti]) = 0 to 22 at%) was studied. In particular, the effects of Al-doping in BTO on compositional, crystallographic and electrical properties were investigated. Previously, BTO films with a Ti cation composition, [Ti]/([Ba] + [Ti]) = ∼60 at% was reported to be advantageous for crystallization, resulting in superior dielectric properties. These Ti-rich BTO films, however, suffered from high leakage currents, necessitating the change in its crystalline structure as well as elemental composition. By incorporating Al2O3 into the BTO films, the leakage current can be controlled, where the BTO films with an Al-doping concentration of 12 at% showed a leakage current reduced by one order of magnitude compared to un-doped BTO (i.e., ∼10−7 to ∼10−6 A/cm2 at +1.6 V) without a significant drop of the dielectric constant (43,un-doped to 40, Al-doped).
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