Investigation of Low Temperature Process of Solution Processed Oxide Semiconductor as a Thin Film Transistor

A solution-processed a-IGZO TFT was fabricated at 300 °C for 6 min using MW and photoirradiation. Photoirradiation enhanced the on current and the on/off current ratio. The improvement in the TFT performance was attributed to the removal of the organic residue in the IGZO film, leading to the decrease in the charge trap.