Photoelectric properties of the n-SnSSe-p-InSe heterojunctions

Photoelectric properties of the n -SnSSe- p -InSe heterojunctions were investigated. A special feature of these structures is the use of an SnS 2− x Se x alloy ( x =0.5) as a wide-bandgap window material, which makes it possible to shift a short-wavelength threshold (lying in the 0.8–1.0 μm range) of the heterojunction photosensitivity band. It is demonstrated that high-quality p-n heterojunctions can be fabricated from layered crystals joined to make an optical contact.