High-brightness thermally evaporated perovskite light-emitting diodes via dual-interface engineering

Thermal evaporation emerges as a promising method for the scale-up fabrication of perovskite light-emitting diodes (PeLEDs) due to its superior repeatability and compatibility with the existing display industry compared to conventional solution process. However, the brightness of current high-efficiency thermally evaporated PeLEDs is generally constrained to a range of thousands of cd/m2. Herein, we propose a dual-interface engineering strategy to modulate the charge injection properties and passivate surface defects in the co-evaporated Cs–Pb–Br perovskite emitter. Our findings demonstrate that introducing 4,4′-Cyclohexylidenebis [N, N-bis(4-methylphenyl) benzenamine] additive to the bottom hole transport layer poly (9-vinylcarbazole) not only facilitates hole injection but also increases the conductivity. Meanwhile, the deposition of functionalized phenylethylammonium bromide salts with a specific number of fluorine atoms passivates the top surface defects and enhances the charge transport simultaneously. Consequently, the optimal PeLEDs achieve a maximum luminance of 75,012 cd/m2, marking one of the brightest thermally evaporated PeLEDs reported to date. The proposed strategy holds significant potential to guide the preparation of high-performance thermally evaporated PeLEDs for high-radiance display applications.