Enhancing efficiency of perovskite NIR phototransistor via sulfonated graphene oxide

Photodetectors are the fundamental element for realizing scientific and commercial applications. Perovskites have attracted much attention as alternative materials for next generation photodetectors, owing to the high absorption coefficient of visible light, high carrier mobility, and unusually high defect tolerance . Previous studies show the working waveband of perovskite photodetector usually be confined to the visible light range. However, the weak absorption in the infrared and the low carrier mobility of perovskites limit the fabrication of high-performance photodetectors. Introducing graphene and its derivatives into perovskites is a proven and effective method to improve the optoelectronic properties. In this work, sulfonated graphene oxide (s-GO) was blended into the organo-inorganic methylammonium lead halide perovskites to fabricate the high-performance near infrared (NIR) photodetector. s-GO is an efficient carrier transport, thereby carrier mobility of doped perovskites can be effectively increased. After blending, the photodetector is twice the responsivity at 1064nm laser of the photodetector with no additives. Meanwhile, the fast response (less than 17 ms) and the impressive low noise equivalent power are achieved.