Robust resistive switching in MoS2-based memristor with Ti top electrode

• The Ti/MoS 2 /Pt device shows enhanced endurance and superior operational uniformity. • The RS mechanism is attributed to the formation and rupture of S vacancy CFs. • Ti x S y interface layer plays an important role in reducing operating voltage. • 1T phase MoS 2 contribute to the excellent operational uniformity. Nonvolatile memories based on two-dimensional nanomaterials are of significant interest to researchers attempting to achieve robust resistive switching (RS) with simple device integration and low energy consumption. In this study, the RS behavior of a MoS 2 -based memristor was investigated using Ti and Ag as top electrodes (TEs). Compared with the memristor using the Ag TE, that employing the Ti TE not only exhibited substantially enhanced and reproducible endurance performance for up to 10 4 cycles, but also showed excellent operational uniformity with a coefficient of variation limited to 3.5% and 4.0% for SET and RESET voltages, respectively. Moreover, the Ti TE memristor demonstrated RS behavior after 1 month of storage under ambient conditions. The formation of a Ti x S y layer at the Ti/MoS 2 interface and the presence of an abundant 1T phase MoS 2 (or S vacancy, V S ) in the initial state of the MoS 2 film contribute to its distinctive properties. This work indicates that suitable TE selection can enable the fabrication of high-performance nonvolatile MoS 2 -based memristors.