Structural and electrical investigation of Al/Ti/TiN/Au based N-face n-GaN contact stack

In this work, the structure of Ti/Al/TiN/Au contact layer stack on the N-face of a single-crystal n-GaN substrate is studied after heat treatment at 750 °C. Since TiN is widely regarded as a diffusion barrier in the stack, the formed structures with three different initial TiN thicknesses (15, 60 and 90 nm) in the contact layers are investigated in detail. The primary tool used for the structural investigations was a (scanning) transmission electron microscope ((S)TEM). In all three samples a low resistivity ohmic contact was formed. However, the TiN layer has not completely blocked the diffusion for any of the samples and both Al and Au diffused through the TiN layer at the temperature of 750 °C. As a result of the heat treatment, a complex AlN/TiN/Au2Al/TiN/Au + Al2.67O4 stack was formed on the surface of the GaN substrate. The measurements have not shown the often reported Ti–Al alloy phase in the samples. The formation of the AlN and TiN layers can be explained by the separation of N from GaN creating N vacancies in the GaN substrate which could help the formation of the ohmic behavior.