Role of Carbon Nitride on the Resistive Switching Behavior of a Silver Stannate Based Device: An Approach to Design a Logic Gate Using the CMOS–Memristor Hybrid System

A simple wet chemical strategy was employed for the synthesis of 4-aminobenzoic acid stabilized silver stannate nanoparticles with and without functionalization by carbon nitrides, CASSS and ASSS, respectively. The X-ray diffraction pattern suggested the formation of an orthorhombic structure of silver stannate with a space group of P212121. The synthesized silver stannate was applied as an active material for memristor application in the form of crossbar device architectures. A memristor is an emergent electronic device that provides significant features to combine memory and computational elements at the same location to reduce device size and power consumption. The ASSS-based device exhibited the write-once-read-many (WORM) type of data storage characteristics, whereas the CASSS-based device displayed S-type asymmetric bipolar characteristics with an ON-to-OFF ratio of 1.2 × 104, and the carrier transport mechanism was followed by Schottky and Poole–Frenkel emission at the low conductance state (LCS) and an ohmic conduction mechanism at the high conductance state (HCS). A universal logic gate was designed, for computing applications, by integrating the memristor, WORM, and CMOS (complementary metal-oxide semiconductor).