苯并环丁烯
材料科学
异质结双极晶体管
双极结晶体管
基质(水族馆)
光电子学
弯曲
异质结
制作
晶体管
胶粘剂
磷化铟
复合材料
图层(电子)
电气工程
砷化镓
电压
工程类
病理
电介质
替代医学
地质学
海洋学
医学
作者
Lishu Wu,Jiayun Dai,Yuechan Kong,Tangsheng Chen,Tong Zhang
标识
DOI:10.1088/1674-4926/43/9/092601
摘要
Abstract This letter presents the fabrication of InP double heterojunction bipolar transistors (DHBTs) on a 3-inch flexible substrate with various thickness values of the benzocyclobutene (BCB) adhesive bonding layer, the corresponding thermal resistance of the InP DHBT on flexible substrate is also measured and calculated. InP DHBT on a flexible substrate with 100 nm BCB obtains cut-off frequency f T = 358 GHz and maximum oscillation frequency f MAX = 530 GHz. Moreover, the frequency performance of the InP DHBT on flexible substrates at different bending radii are compared. It is shown that the bending strain has little effect on the frequency characteristics (less than 8.5%), and these bending tests prove that InP DHBT has feasible flexibility.
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