无杂散动态范围
功勋
电子工程
动态范围
寄生电容
电容器
CMOS芯片
电容
电气工程
电容感应
噪声系数
放大器
线性
工程类
噪音(视频)
采样(信号处理)
噪声整形
奈奎斯特频率
噪声谱密度
有效输入噪声温度
物理
主动噪声控制
低功耗电子学
奈奎斯特率
噪声地板
微分非线性
极限(数学)
噪声温度
逐次逼近ADC
炸薯条
计算机科学
电阻式触摸屏
闪烁噪声
奈奎斯特稳定性判据
馈通
运算放大器
功值放大器
作者
Chenglong Zhu,H. Wang,Chenkai Peng,Hengzhi Hong,Hengzhi Hong,Yu Xia,Yuhua Cheng,Mang I Vai,Guodong Su,Guodong Su,Hui Hong,Hui Hong
标识
DOI:10.1016/j.mejo.2026.107147
摘要
A 14-bit 5MS/s pipelined-successive approximation register (SAR) analog-to-digital converter (ADC) is presented with high-linearity bootstrapped switches and kT/C noise cancellation. The proposed linearity-enhanced bootstrapped switch effectively isolates the critical signal path from the nonlinear parasitic capacitance and significantly improves the sampling spurious-free dynamic range (SFDR). By embedding a double-sampling noise cancellation mechanism into a two-stage dynamic residue amplifier to eliminate discrete-time kT/C noise, the proposed architecture overcomes the thermal noise limit and reduces the required sampling capacitance without incurring any static power penalty. To further reduce the overall power consumption and silicon area of the ADC, customized metal-oxide-metal (MOM) capacitors with low parasitic capacitance and compact layout are used in the 8-bit capacitive DAC (CDAC) within the second-stage sub-ADC. Fabricated in a 65-nm CMOS process, the prototype ADC occupies an active area of 0.123 mm 2 . Measurement results demonstrate a signal-to-noise-distortion ratio (SNDR) of 71.5 dB and an SFDR of 83 dB at the Nyquist input frequency. The total power consumption of the ADC is 125 μ W at 5 MS/s, yielding a Schreier figure of merit ( FoM S ) of 174.5 dB and a Walden figure of merit ( FoM W ) of 8.1 fJ/conversion-step.
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