亚稳态
空位缺陷
硅
硼
材料科学
k-最近邻算法
密度泛函理论
职位(财务)
形式主义(音乐)
简并能级
凝聚态物理
化学物理
计算化学
物理
化学
光电子学
核物理学
量子力学
计算机科学
人工智能
财务
视觉艺术
艺术
经济
音乐剧
作者
Cecil Naphtaly Moro Ouma,W.E. Meyer
出处
期刊:De Gruyter eBooks
[De Gruyter]
日期:2018-12-17
卷期号:: 113-122
标识
DOI:10.1515/9783110568196-007
摘要
Using four distinct configurations of the boron-vacancy (BV) complex in silicon, we investigate the experimentally observed defect metastability of the BV complex in silicon using the HSE06 hybrid functional within the density functional theory formalism. We identify the experimentally observed metastable configurations of the defect complex when the substitutional boron is in the nearest neighbor position with respect to silicon vacancy and when the two defects are in the next (second) nearest neighbor position with respect to each other. The next (second) nearest neighbor position consists of two configurations that almost degenerate with C1 and C1h symmetry.
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