材料科学
介电常数
光电子学
电介质
介电谱
电容器
半导体
等效电路
肖特基势垒
基质(水族馆)
溅射
电极
薄膜
电气工程
纳米技术
二极管
化学
海洋学
地质学
工程类
电化学
物理化学
电压
作者
Rainer Schmidt,P. M. Mayrhofer,U. Schmid,A. Bittner
摘要
In this work, a comprehensive characterization of metal-insulator-semiconductor structures by impedance spectroscopy is demonstrated for the case of electrically insulating, highly c-axis oriented, 600 nm sputter-deposited AlN films on n-Si substrates with Al top electrodes. Direct visual analysis and equivalent circuit fitting of the dielectric data were performed. For the latter procedure, the circuit model consisted of three series resistor-capacitor connection elements for the three dielectric contributions detected. The three contributions were identified as the AlN film, n-Si substrate, and an interface barrier effect. Several essential device parameters were determined separately, by visual or equivalent circuit fitting analysis, such as the dielectric permittivity of the AlN layer, the temperature dependence of the AlN permittivity, and the resistances of the AlN layer, the n-Si substrate, and the interface contribution. Furthermore, DC bias dependent impedance measurements allowed the identification of a Schottky-type interface barrier.
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