Highly Scalable Metal Induced Lateral Crystallization (MILC) Techniques for Vertical Si Channel in Ultra-High (> 300 Layers) 3D Flash Memory

State-of-the-art Metal Induced Lateral Crystallization (MILC) techniques have been demonstrated for 3D flash memory with ultra-high (over 300) layers. For the first time, 14$-\mu$m-long macaroni silicon (Si) channels in vertical memory hole are fully single-crystallized. Furthermore, by using newly developed nickel (Ni) gettering technique, the 112 word-line-layer 3D flash memory exhibits cell array performances such as read noise reduction of 40% or more, and 10-times channel conductance without any degradations of cell reliability.