Interface engineering of oxidized Mo electrodes for imprint stability and enhanced endurance in hafnia-based ferroelectric devices

Short O 2 RTA converts Mo into a MoO x -rich interface ( φ ≥ 5.5 eV), suppressing trap formation and stabilizing imprint in HZO. This in-situ route avoids sputtered MoO 3 and enables robust FTJ endurance.