An n-MOSFET Layout with Multi-Finger Z Gate for Radiation Tolerance

In this paper, a new n-MOSFET layout with multi-finger Z gate is proposed to reduce the total ionizing dose (TID) effect. In addition to the proposed layout, multi-finger single gate layout is also simulated using Sentaurus TCAD in 3D. Firstly, drain current - gate voltage curves of both layouts are compared in order to verify the radiation hardening ability of the proposed layout. Secondly, we compare TID responses by extracting threshold voltages and leakage currents from both layouts. Thirdly, the finger number is investigated for both layouts because it is an important factor for multi-finger layout. The results have indicated that the finger number significantly affects the multi-finger single gate layout, whereas the proposed multi-finger Z gate layout is relatively little affected by the finger number in radiation environment.