Experimental and Theoretical Study on failure mechanism of Superjunction MOSFET under H3TRB Testing

H3TRB-HVDC test is the appropriate test to prove the robustness of chip against humidity and high electric fields. The failure mechanism of Superjunction MOSFET (SJ-MOS) in H3TRB-HVDC test was studied. By the comparison tests of SJ-MOS with different bias voltage, packaging materials and passivation layers, as well as the comparison tests between SJ-MOS and conventional power MOSFETs (C-MOS) with the same breakdown voltage class, it is found that both high electric field in the termination region, moisture and stress play important roles in the failure. Combined with simulation, a new failure model of H3TRB is proposed.