Nature of polarization in wide-bandgap semiconductor detectors under high-flux irradiation: Application to semi-insulatingCd1−xZnxTe

In this paper, we theoretically investigate the mechanism of polarization in wide-bandgap semiconductor radiation detectors under high-flux x-ray irradiation. Our general mathematical model of the defect structure within the bandgap is a system of balance laws based on carrier transport and defect transition rates, coupled together with the Poisson equation for the electric potential. The dynamical system is self-consistently evolved in time using a high-resolution wave propagation numerical algorithm. Through simulation, we identify and present a sequence of dynamics that determines a critical flux of photons above which polarization effects dominate. Using the experience gained through numerical simulation of the full set of equations, we derive a reduced system of conservation laws that describe the dominant dynamics. A multiple scale perturbation analysis of the reduced system is shown to yield an analytical dependence of the maximum sustainable flux on key material, detector, and operating parameters. The predicted dependencies are validated for $16\ifmmode\times\else\texttimes\fi{}16\phantom{\rule{0.3em}{0ex}}\text{pixel}$ CdZnTe monolithic detector arrays subjected to a high-flux $120\phantom{\rule{0.3em}{0ex}}\mathrm{kVp}$ x-ray source.