Investigating the effect of different Perovskite/Silicon interfaces on the intrinsic stresses

Organic based perovskite semiconductors provide a suitable material candidate to fabricate optoelectronic devices such as solar cells due to its low deposition cost and high efficiency. Thermal stresses are generated during processing and operating steps of the perovskite/silicon layer due to the thermal mismatch between both materials. Different interfaces give different results and different stress distribution, the effect will be investigated in this paper.