堆积
材料科学
异质结
拉曼光谱
外延
化学气相沉积
光电子学
表征(材料科学)
联轴节(管道)
纳米技术
图层(电子)
复合材料
光学
核磁共振
物理
作者
Jing Zhang,Jinhuan Wang,Peng Chen,Yue Sun,Shuang Wu,Zhiyan Jia,Xiaobo Lu,Hua Yu,Wei Chen,Jiaojun Zhu,Guobo Xie,Rong Yang,Dongxia Shi,Xiulai Xu,Jianyong Xiang,Kaihui Liu,Guangyu Zhang
标识
DOI:10.1002/adma.201504631
摘要
Epitaxial growth of A-A and A-B stacking MoS2 on WS2 via a two-step chemical vapor deposition method is reported. These epitaxial heterostructures show an atomic clean interface and a strong interlayer coupling, as evidenced by systematic characterization. Low-frequency Raman breathing and shear modes are observed in commensurate stacking bilayers for the first time; these can serve as persuasive fingerprints for interfacial quality and stacking configurations.
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