The effect of sputtering process on the deposition rate,composition and electroluminescent properties of BaAl_2S_4 thin films

BaAl2S4:Eu thin film is the most promising blue phosphor for full-colo r inorganic electroluminescent displays.BaAl2S4:Eu thin film phosphors with thickness in the range of 150~375nm were deposited by r.f magnet ron sputtering in H2S and Ar atmosphere.The effects of sputtering power,Ar/H2 S ratio and the gas pressure on the deposition rate and the composition of the B aAl2S4:Eu thin films were investigated.Meanwhile,the electroluminescent proper ties of the BaAl2S4:Eu thin film phosphors were studied under different annealin g conditions.Optimum processing condition for the BaAl2S4:Eu thin film was anal yzed.