Low-Pb Substitution Unlocks Cd-Based Ruddlesden–Popper Perovskites for Bright Emission and Ambipolar Transport

双极扩散 光致发光 材料科学 激子 发光 密度泛函理论 载流子 化学物理 光电子学 量子产额 分子物理学 替代(逻辑) 电子 晶体管 电荷(物理) 光发射 自发辐射 再分配(选举) 量子效率 电子传输链 光化学 凝聚态物理 发射光谱 电子结构
作者
Zisheng Tang,Zhe Pang,Damin Liu,Xiaoqian Wang,Jieheng Lv,Dafu Zhao,Chengqi Liu,Chengqi Liu,Jiaqian Que,Kefeiyang Hu,Chong Peng,Xingbo Huang,Yingfei Liu,Dongyuan Zhao,Yong Liu
出处
期刊:ACS Nano [American Chemical Society]
标识
DOI:10.1021/acsnano.6c07579
摘要

Abstract Two-dimensional (2D) Ruddlesden–Popper (RP) Cd-based perovskites have attracted increasing interest in optoelectronics owing to their environmental stability and tunable structural dimensionality. However, strong excited-state localization, abundant deep-level trap states, and inefficient carrier transport limit emission efficiency and device performance. Here, we report low-Pb-substituted 2D RP Cd-based perovskites, (PA)2CsCd2–xPbxCl7 (x = 0–0.4), and demonstrate that partial Pb2+ substitution provides an effective route to concurrently regulate luminescence and charge transport. At the optimal Pb2+ substitution level of x = 0.2, the photoluminescence quantum yield increases by approximately 7.6-fold, rising from 10.5% for the pristine sample to 80%. Steady-state and time-resolved photoluminescence analyses indicate a gradual redistribution from long-lived self-trapped exciton emission toward faster, higher-energy excitonic recombination. Field-effect transistors based on (PA)2CsCd1.8Pb0.2Cl7 exhibit pronounced ambipolar transport, with median hole and electron mobilities of 3.62 cm2 V–1 s–1 and 1.81 cm2 V–1 s–1, respectively, and a high on/off ratio of 8 × 107. Density functional theory calculations further reveal that Pb2+ substitution modulates the band-edge electronic states and suppresses the formation of deep-level defects. This work indicates that low-level Pb2+ substitution is an effective route for the concurrent optimization of luminescence and charge transport in Cd-based 2D perovskites, highlighting their potential for applications in high-performance transistors and light-emitting devices.
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