电压降
光致发光
材料科学
光电子学
钙钛矿(结构)
工程物理
电气工程
化学
物理
结晶学
电压
工程类
分压器
作者
Pradeep R. Nair,Karthik Raitani
出处
期刊:Cornell University - arXiv
日期:2024-12-27
标识
DOI:10.48550/arxiv.2412.19572
摘要
The commercialization prospects of perovskite light emitting diodes depend on its luminescence efficiency under large carrier densities. The decrease in luminescence efficiency under such high injection conditions could lead to an undesired increase in power consumption with associated degradation and stability concerns. Here, through detailed modeling of thermal transport and carrier generation-recombination, we unravel the physical mechanisms that cause luminescence droop under high injection conditions. We show that self-heating leads to a reduction in the radiative recombination (both bimolecular and excitonic). The resultant increase in non-radiative recombination and hence the thermal dissipation acts as a positive feedback mechanism that leads to efficiency droop in perovskites. Our model predictions, well supported by experimental results, could be of broad interest towards the degradation-aware thermal design of perovskite optoelectronics and stability.
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