Decoupled Double-Channel p-GaN Gate AlGaN/GaN HEMT Featuring Low Reverse Conduction Loss and High Forward Threshold Voltage

A Hybrid-Source p-GaN gate Normally-OFF AlGaN/GaN HEMT is proposed and successfully fabricated, based on a decoupled double-channel structure. It mitigates the compatibility issue between the p-GaN gate and double-channel structures by decoupling the upper and lower channels through a Hybrid-Source structure. Thanks to the source-side Schottky connection to the lower channel, an extremely low reverse turn-ON voltage (-0.5 V) and a large forward threshold voltage (+3.2 V) are simultaneously achieved.