光电子学
发光二极管
量子阱
材料科学
电致发光
压电
光致发光
波长
铟镓氮化物
二极管
亮度
蓝移
光学
物理
纳米技术
复合材料
激光器
图层(电子)
作者
Yancun Yu,Renfeng Chen,Yiwei Duo,Rui He,Jiankun Yang,Xiaoli Ji,Hao Long,Junxi Wang,Tongbo Wei
标识
DOI:10.1088/1361-6641/acfd56
摘要
Abstract As a promising technology for next-generation displays due to their high brightness and low power consumption, InGaN-based micro light-emitting diodes (Micro-LEDs) have attracted great attention in recent years. In this work, we detailedly investigate the carrier recombination and transportation process in dual-wavelength InGaN/GaN multiple quantum wells (MQWs) Micro-LED arrays under piezo-phototronic effects using electroluminescence (EL) and time-resolution photoluminescence measurements. With the increase of external strain, the violet EL intensity of dual-wavelength Micro-LED arrays first increases obtaining a maximum enhancement of ∼12% and then decreases, whereas blue EL emission almost maintains constant. Additionally, as the size of Micro-LED decreases, the enhancement obtained via piezo-phototronic effect will reduce, which is attributed to their inherently weaker piezoelectric polarization effect. Combining with dynamic analysis of carriers in the blue quantum well (QW), it is concluded that strain-induced interface polarized charges promote the wave function overlap of electron–hole pair, but reduce the injection of hole carriers in blue QW. Superposition of the above two factors enables the blue EL intensity stable under piezoelectric coupling. These results present a promising potential of piezo-phototronic effects to improve the Micro-LEDs devices.
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