High‐Performance All‐Inorganic Perovskite‐Quantum‐Dot‐Based Flexible Organic Phototransistor Memory with Architecture Design

Abstract A novel organic phototransistor memory (OPTM) with architecture design is fabricated with all‐inorganic perovskite quantum dots (QDs) as charge trapping layer. The novel architecture enables ultrashort channel length and vertical the charge transfer to effectively suppress both trapped carriers effect and interface effect, two key factors which impact photonic memory performance. Additionally, perovskite QDs are introduced to function as both the charge trapping layer and a UV‐light‐responsive material that emits visible light that can be subsequently absorbed by the active layer, leading to efficient utilization of UV light to generate trapped charges. OPTM exhibits excellent memory properties under significantly improved light conditions, which is superior to previous reports. Moreover, flexible OPTM exhibits excellent mechanical stability, which is associated with vertical charge transport that eliminates the effect of cracks and dislocations formed during bending. Furthermore, an OPTM array is fabricated, which can realize imaging and memory capability with long‐term retention performance and shows reproducibility under the electric erasing and reprogramming process. Hence, with this novel architecture, OPTM realizes light programming with a short time, low light intensity, and broadband photoresponse along with excellent memory performance, which has great potential for practical application, especially in the flexible electronics market.