石墨烯
数码产品
晶体管
制作
材料科学
饱和速度
纳米技术
电子线路
太赫兹辐射
光电子学
工程物理
电气工程
物理
工程类
电压
医学
病理
替代医学
作者
Lei Liao,Xiangfeng Duan
出处
期刊:Materials Today
[Elsevier BV]
日期:2012-07-01
卷期号:15 (7-8): 328-338
被引量:128
标识
DOI:10.1016/s1369-7021(12)70138-4
摘要
Graphene is emerging as an attractive electronic material for future electronics. With the highest carrier mobility, high saturation velocity, high critical current densities, and single atomic thickness, graphene has great potential for ultra-high speed transistors, with the highest projected cut-off frequency exceeding 1 THz. However, the fabrication of high speed graphene transistors is of significant challenge, since conventional electronic fabrication processes often introduce undesirable defects into graphene lattices. Significant efforts have made to mitigate these challenges. Here we review the opportunities, challenges, as well as the recent advances in the development of high speed graphene transistors and circuits.
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