自由载流子吸收
吸收(声学)
免费承运人
半导体
材料科学
太阳能电池
光电子学
硅
载流子密度
载流子寿命
波长
光学
兴奋剂
物理
复合材料
作者
D.A. Clugston,Paul A. Basore
标识
DOI:10.1002/(sici)1099-159x(199707/08)5:4<229::aid-pip164>3.0.co;2-6
摘要
Free-carrier absorption can be a significant parasitic optical absorption process in solar cells. Although estimates of its influence have been made in the past, it has not previously been incorporated into a numerical semiconductor device simulator and studied in conjunction with other effects. A finite element model of free-carrier absorption is presented that incorporates the dependency of the absorption coefficient on the carrier concentration profile, including the change in carrier density that occurs across a single finite element. This model has been implemented in the semiconductor modelling program PC1D for Windows, and used to simulate the effects of free-carrier absorption on several types of silicon solar cells. It was found to have only a very small effect on cell efficiency, but can significantly affect the long-wavelength spectral response, which has implications for device characterization. Empirical equations for the behaviour of free-carrier absorption in a variety of materials are presented. © 1997 John Wiley & Sons, Ltd.
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