Analytical model of partially depleted SOI MOSFET based on BSIM3V3

A physical model of partially depleted SOI MOSFET was proposed.The SOI MOSFET can be regarded as the combination of bulk silicon MOSFET and bipolar transistor.The model is obtained through detailed analysis of operation mechanism of SOI devices.The model parameters are extracted.The data obtained from this analytical model are compared with device simulation.Excellent agreement is obtained.