激子
二硒化钨
物理
比克西顿
退化(生物学)
库仑
电子
半导体
凝聚态物理
薄膜
单层
动量(技术分析)
Valleytronics公司
自由度(物理和化学)
光电子学
钨
作者
Julien Madéo,Michael K. L. Man,Chakradhar Sahoo,Marshall Campbell,Vivek Pareek,E. Laine Wong,Abdullah Al-Mahboob,Nicholas S. Chan,Arka Karmakar,Bala Murali Krishna Mariserla,Xiaoqin Li,Tony F. Heinz,Ting Cao,Keshav M. Dani
出处
期刊:Science
[American Association for the Advancement of Science]
日期:2020-12-04
卷期号:370 (6521): 1199-1204
被引量:280
标识
DOI:10.1126/science.aba1029
摘要
Resolving momentum degrees of freedom of excitons, which are electron-hole pairs bound by the Coulomb attraction in a photoexcited semiconductor, has remained an elusive goal for decades. In atomically thin semiconductors, such a capability could probe the momentum-forbidden dark excitons, which critically affect proposed opto-electronic technologies but are not directly accessible using optical techniques. Here, we probed the momentum state of excitons in a tungsten diselenide monolayer by photoemitting their constituent electrons and resolving them in time, momentum, and energy. We obtained a direct visual of the momentum-forbidden dark excitons and studied their properties, including their near degeneracy with bright excitons and their formation pathways in the energy-momentum landscape. These dark excitons dominated the excited-state distribution, a surprising finding that highlights their importance in atomically thin semiconductors.
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