Hydrogenated Silicon Nitride SiNx:H Deposited by Dielectric Barrier Discharge for Photovoltaics

Dense hydrogenated silicon nitride (SiNx:H) layers for photovoltaics are made by Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition (AP‐PECVD). The dependence of morphology, chemical, optical and passivation properties of the thin films on the plasma reactor configuration, the mode of homogeneous DBD (glow, Townsend, RF, nano pulsed) and the SiH4/NH3 gas flow ratio are investigated. Avoiding gas recirculation, improving thin film homogeneity through the electrode length and the plasma modulation appear as key points. Silicon solar cells made with AP‐PECVD SiN antireflective coating have the same efficiency as standard low pressure PECVD cells, showing the great potential of AP‐PECVD.