Performance analysis of dual gate organic thin film transistor through analytical modeling

Enormous research has been done in the field of organic electronics recently. A lot of innovative practices are anticipated for boosting the device and circuit performance. DG-OTFT i.e. dual gate organic thin film transistors are one of these methods that are used for the enhancement of the organic materials based devices and circuits performance. The DG-OTFT augments the operation of the devices and circuits and also makes the devices sturdy. In this research paper depth analyses of the DG-OTFT for different modes of operation (bottom gate, top gate, and dual gate modes) in terms of threshold voltage, drive current, mobility, sub-threshold slope and current on-off ratio is performed. It is observed that as the two channels are formed in DG-OTFT, it results in superior carrier injection that shows significant enhancement in drive current, in the dual gate mode. Evaluation and validation of electrical characteristics and performance parameters of DG-OTFT using PDPP-TNT as organic semiconductor with the reported experimental results is done using state of the are Atlas 2-D by Silvaco Inc. It is a numerical device 2-D TCAD simulator, and it is observed that the simulation results are in close agreement with experimental data.