Formation and switching mechanism in high-performance perovskite memristors with ultra-wide dynamic range

Memristors, with their ability to store and process data, could enable a new era of computing. Perovskite semiconductors have been used in memristors, but their performance and reliability remain limited, and the switching mechanism is not fully understood. Here, we develop a patterning approach using a photosensitive insulator that addresses both issues. It enables perovskite memristors with ultra-low set voltages (0.04 V) and high On/Off ratios (3 × 10¹⁰), while defining the switching location and eliminating the formation step. We achieve retention beyond 10 days and endurance of 1.3 × 10⁹ cycles. Contrary to common belief, switching is not governed by distributed metal nanofilaments but by one or a few localized micron-sized regions formed during the initial measurement. These regions show Ag penetration and thermally induced changes. Subsequent cycles do not cause further structural changes. Temperature- and scan-rate-dependent measurements indicate an electrochemical switching mechanism independent of perovskite composition.