欧姆接触
量子隧道
材料科学
肖特基势垒
接触电阻
钙钛矿(结构)
单层
化学物理
非平衡态热力学
异质结
纳米技术
电极
形式主义(音乐)
密度泛函理论
肖特基二极管
凝聚态物理
卤化物
电子结构
光电子学
基本电荷
工作职能
化学
金属
电阻率和电导率
工作(物理)
作者
Xinbiao Wang,Qi Zhang,Jing Li,Ji‐Sang Park,Yiming Yang,Letian Dou,E. H. Hwang
标识
DOI:10.1002/aelm.202500269
摘要
ABSTRACT Minimizing contact resistance between metal electrodes and perovskites remains a critical challenge in developing perovskite‐based electronic and optoelectronic devices. Despite extensive experimental and theoretical efforts to minimize the contact resistance, atomic‐level insights into metal‐perovskite interfaces remain insufficiently understood. In this paper, we investigate the electronic and transport properties of 2D hybrid organic–inorganic perovskites, specifically (BA) 2 PbBr 4 and (PEA) 2 PbBr 4 , which consist of monolayer bromide perovskite layers with different organic spacer molecules: n‐butylammonium (BA) and phenylethylammonium (PEA) cations. We provide a comprehensive analysis of the Au/perovskites interface, considering two contact configurations, i.e., top‐contact and edge‐contact. We perform first‐principles calculations and use the nonequilibrium Green's function formalism to calculate the transport characteristics. We find that a Schottky barrier forms in the top‐contact configuration, but the edge‐contact configuration shows ohmic behavior for both Au/(BA) 2 PbBr 4 and Au/(PEA) 2 PbBr 4 . The edge‐contact configuration also enables highly efficient charge injection with a negligible interfacial tunneling barrier due to Au‐induced midgap states. For the top contact configuration, Au/(PEA) 2 PbBr 4 shows better transport behavior compared to (BA) 2 PbBr 4 , which is attributed to its lower tunneling barrier and higher density of metal‐induced midgap states. This work provides theoretical guidelines for designing low‐resistance metal‐2D hybrid perovskite contacts.
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