Simulation of Organic Thin-Film Transistor (OTFT) having High Carrier Mobility
作者
Shonak Bansal,Prince Jain
标识
DOI:10.1109/icacite53722.2022.9823683
摘要
The cost of thin-film transistors (TFTs) can be decreased by using organic thin-film transistor (OTFT) that uses low-cost organic polymers instead of expensive crystalline silicon material. Organic thin-film transistor is the future of the next-generation high-resolution display industry because the processes are much simple when compared with conventional silicon technology. Furthermore, the organic material makes mechanical flexibility with other substrates for insubstantial and foldable products. In this paper, we present the thin-film transistors that use organic material as an active channel and doped silicon (Si) material as a gate dielectric which results in high mobility. Field-effect mobility is observed to be around 17.78 m2/V-s and 0.078 m2/V-s in the saturation and linear current region respectively. The presented simulation result demonstrates that the OTFT is very promising for the next era of invisible and flexible electronics.