High‐Performance CsPb1−xSnxBr3 Perovskite Quantum Dots for Light‐Emitting Diodes

All inorganic CsPbBr3 perovskite quantum dots (QDs) are potential emitters for electroluminescent displays. We have developed a facile hot-injection method to partially replace the toxic Pb2+ with highly stable Sn4+ . Meanwhile, the absolute photoluminescence quantum yield of CsPb1-x Snx Br3 increased from 45 % to 83 % with SnIV substitution. The transient absorption (TA) exciton dynamics in undoped CsPbBr3 and CsPb0.67 Sn0.33 Br3 QDs at various excitation fluences were determined by femtosecond transient absorption, time-resolved photoluminescence, and single-dot spectroscopy, providing clear evidence for the suppression of trion generation by Sn doping. These highly luminescent CsPb0.67 Sn0.33 Br3 QDs emit at 517 nm. A device based on these QDs exhibited a luminance of 12 500 cd m-2 , a current efficiency of 11.63 cd A-1 , an external quantum efficiency of 4.13 %, a power efficiency of 6.76 lm w-1 , and a low turn-on voltage of 3.6 V, which are the best values among reported tin-based perovskite quantum-dot LEDs.