光电二极管
材料科学
光电子学
探测器
光电探测器
响应度
暗电流
CMOS芯片
晶体管
红外线的
动态范围
红外探测器
比探测率
光学
电压
物理
量子力学
作者
Liuchong Fu,Yuming He,Jiajia Zheng,Yuxuan Hu,Jiayou Xue,Sen Li,Ciyu Ge,Xiaosheng Yang,Meng Peng,Kanghua Li,Xiangbin Zeng,Jinchao Wei,Desheng Xue,Haisheng Song,Chao Chen,Jiang Tang
标识
DOI:10.1002/adma.202211522
摘要
Abstract Short‐wave infrared detectors are increasingly important in the fields of autonomous driving, food safety, disease diagnosis, and scientific research. However, mature short‐wave infrared cameras such as InGaAs have the disadvantage of complex heterogeneous integration with complementary metal–oxide–semiconductor (CMOS) readout circuits, leading to high cost and low imaging resolution. Herein, a low‐cost, high‐performance, and high‐stability Te x Se 1– x short‐wave infrared photodiode detector is reported. The Te x Se 1– x thin film is fabricated through CMOS‐compatible low‐temperature evaporation and post‐annealing process, showcasing the potential of direct integration on the readout circuit. The device demonstrates a broad‐spectrum response of 300–1600 nm, a room‐temperature specific detectivity of 1.0 × 10 10 Jones, a −3 dB bandwidth up to 116 kHz, and a linear dynamic range of over 55 dB, achieving the fastest response among Te‐based photodiode devices and a dark current density 7 orders of magnitude smaller than Te‐based photoconductive and field‐effect transistor devices. With a simple Si 3 N 4 packaging, the detector shows high electric stability and thermal stability, meeting the requirements for vehicular applications. Based on the optimized Te x Se 1– x photodiode detector, the applications in material identification and masking imaging is demonstrated. This work paves a new way for CMOS‐compatible infrared imaging chips.
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