High Performance Broadband Ultraviolet A/Ultraviolet C Detector Based on Ga2O3/p-GaN Nanocomposite Film Fabricated by Magnetron Sputtering

Ultraviolet (UV) detector based on β-Ga 2 O 3 /p-GaN was fabricated in this paper. The growth process involved deposition of amorphous Ga 2 O 3 layer by means of magnetron sputtering and conversion of β-Ga 2 O 3 . The obtained detector displays excellent UV sensing properties which covers Ultraviolet A(UVA)/Ultraviolet C(UVC) region with fast response. It will provide a new route to fabricate β-Ga 2 O 3 /p-GaN heterostructure for applications in broadband ultraviolet sensing.